| Literature DB >> 19684831 |
Ting-Ting Kang1, Masatomo Yamamoto, Mikiyasu Tanaka, Akihiro Hashimoto, Akio Yamamoto, Ryota Sudo, Akifumi Noda, D W Liu, Kohji Yamamoto.
Abstract
Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical-vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back-scattering theory of Smith [Phys. Rev. B65, 115206 (2002)]. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier to be subjected to non-Drude behavior in electrical performance.Entities:
Year: 2009 PMID： 19684831 DOI： 10.1364/ol.34.002507
Source DB: PubMed Journal: Opt Lett ISSN： 0146-9592 Impact factor: 3.776