| Literature DB >> 19671985 |
Lukas Durrer1, Jason Greenwald, Thomas Helbling, Matthias Muoth, Roland Riek, Christofer Hierold.
Abstract
Sensors and devices made from single-walled carbon nanotubes (SWNTs) are most often electrically probed through metal leads contacting the semiconducting SWNTs (s-SWNTs). Contact barriers in general and Schottky barriers (SBs) in particular are usually obtained at a metal-semiconductor interface. The unique one-dimensional structure (1D) of SWNTs allows tailoring of the SB heights through the contact metal type and the size of the s-SWNT bandgap. A large workfunction reduces the SB height (e.g. using Pd as the metal contact material). The bandgap of an SWNT is inversely proportional to its diameter. Ohmic contacts--the preferable choice--are achieved for s-SWNTs with diameters greater than 2 nm on Pd metal leads. SWNT device reproducibility, on the other hand, requires a narrow distribution of the SWNT diameters. Here, we present a method to fabricate SWNTs with a large and adjustable mean diameter (1.9-2.4 nm) and very narrow diameter distribution (+/- 0.27 nm at mean diameter 1.9 nm). The results are achieved through a size separation of the ferritin catalyst particles by sedimentation velocity centrifugation prior to their use in the chemical vapor deposition (CVD) formation of SWNTs.Entities:
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Year: 2009 PMID: 19671985 DOI: 10.1088/0957-4484/20/35/355601
Source DB: PubMed Journal: Nanotechnology ISSN: 0957-4484 Impact factor: 3.874