Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO(2) and Ga(2)O(3) nanowires.

We report the assembly and characterization of individually suspended Ag, GaN, SnO(2), and Ga(2)O(3) nanowires (NWs) using dielectrophoresis. The four kinds of NWs were individually assembled using an experimental approach based on the dielectrophoretic force equation. To freely suspend the individual NWs, we controlled the thickness of the bottom electrode. After depositing a Pt top electrode using a focused ion beam, we investigated the I-V curves of NW devices according to the change in the bottom electrode metal as well as the free suspension height from the insulator. We found that their conductivity for four kinds of NWs was remarkably increased along with the increase in the suspension height, while the gate effect in GaN was reduced.