| Literature DB >> 19658952 |
M Takizawa1, Y Hotta, T Susaki, Y Ishida, H Wadati, Y Takata, K Horiba, M Matsunami, S Shin, M Yabashi, K Tamasaku, Y Nishino, T Ishikawa, A Fujimori, H Y Hwang.
Abstract
We have studied the valence redistribution of V in LaAlO(3)/LaVO(3)/LaAlO(3) trilayers, which are composed of only polar layers grown on SrTiO3 (001) substrates, by core-level photoemission spectroscopy. We have found that the V valence is intermediate between V3+ and V4+ for thin LaAlO3 cap layers, decreases with increasing cap-layer thickness, and finally recovers the bulk value of V3+ at approximately 10 unit-cell thickness. In order to interpret these results, we propose that the atomic reconstruction of the polar LaAlO3 surface competes with the purely electronic V valence change so that the polar catastrophe is avoided at the cost of minimum energy.Entities:
Year: 2009 PMID: 19658952 DOI: 10.1103/PhysRevLett.102.236401
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161