Literature DB >> 19658946

Evidence for two Mg related acceptors in GaN.

B Monemar1, P P Paskov, G Pozina, C Hemmingsson, J P Bergman, T Kawashima, H Amano, I Akasaki, T Paskova, S Figge, D Hommel, A Usui.   

Abstract

The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically grown on bulk GaN templates, to avoid strain broadening of the optical spectra. Bound-exciton spectra can be studied in these samples for Mg concentrations up to [Mg] approximately 2 x 10(19) cm(-3). Contrary to previous work it is found that instabilities in the photoluminescence spectra are not due to unstable shallow donors, but to unstable Mg-related acceptors. Our data show that there are two Mg-related acceptors simultaneously present: the regular (stable) substitutional Mg acceptor, and a complex acceptor which is unstable in p-GaN.

Entities:  

Year:  2009        PMID: 19658946     DOI: 10.1103/PhysRevLett.102.235501

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor.

Authors:  A K Singh; K P O'Donnell; P R Edwards; K Lorenz; M J Kappers; M Boćkowski
Journal:  Sci Rep       Date:  2017-02-03       Impact factor: 4.379

2.  Temperature-dependent photoluminescence in light-emitting diodes.

Authors:  Taiping Lu; Ziguang Ma; Chunhua Du; Yutao Fang; Haiyan Wu; Yang Jiang; Lu Wang; Longgui Dai; Haiqiang Jia; Wuming Liu; Hong Chen
Journal:  Sci Rep       Date:  2014-08-20       Impact factor: 4.379

3.  Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

Authors:  Kexiong Zhang; Hongwei Liang; Yang Liu; Rensheng Shen; Wenping Guo; Dongsheng Wang; Xiaochuan Xia; Pengcheng Tao; Chao Yang; Yingmin Luo; Guotong Du
Journal:  Sci Rep       Date:  2014-09-10       Impact factor: 4.379

4.  Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

Authors:  Zhiqiang Liu; Xiaoyan Yi; Zhiguo Yu; Guodong Yuan; Yang Liu; Junxi Wang; Jinmin Li; Na Lu; Ian Ferguson; Yong Zhang
Journal:  Sci Rep       Date:  2016-01-18       Impact factor: 4.379

  4 in total

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