Literature DB >> 19658882

Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential.

Fabien Tran1, Peter Blaha.   

Abstract

A modified version of the exchange potential proposed by Becke and Johnson [J. Chem. Phys. 124, 221101 (2006)10.1063/1.2213970] is tested on solids for the calculation of band gaps. The agreement with experiment is very good for all types of solids we considered (e.g., wide band gap insulators, sp semiconductors, and strongly correlated 3d transition-metal oxides) and is of the same order as the agreement obtained with the hybrid functionals or the GW methods. This semilocal exchange potential, which recovers the local-density approximation (LDA) for a constant electron density, mimics very well the behavior of orbital-dependent potentials and leads to calculations which are barely more expensive than LDA calculations. Therefore, it can be applied to very large systems in an efficient way.

Entities:  

Year:  2009        PMID: 19658882     DOI: 10.1103/PhysRevLett.102.226401

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  128 in total

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9.  Extended Hückel Semi-Empirical Approach as an Efficient Method for Structural Defects Analysis in 4H-SiC.

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10.  Direct-bandgap emission from hexagonal Ge and SiGe alloys.

Authors:  Elham M T Fadaly; Alain Dijkstra; Jens Renè Suckert; Dorian Ziss; Marvin A J van Tilburg; Chenyang Mao; Yizhen Ren; Victor T van Lange; Ksenia Korzun; Sebastian Kölling; Marcel A Verheijen; David Busse; Claudia Rödl; Jürgen Furthmüller; Friedhelm Bechstedt; Julian Stangl; Jonathan J Finley; Silvana Botti; Jos E M Haverkort; Erik P A M Bakkers
Journal:  Nature       Date:  2020-04-08       Impact factor: 49.962

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