Literature DB >> 19550622

A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector.

Hyundai Park, Ying-Hao Kuo, Alexander W Fang, Richard Jones, Oded Cohen, Mario J Paniccia, John E Bowers.   

Abstract

We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections.

Year:  2007        PMID: 19550622     DOI: 10.1364/oe.15.013539

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Room-temperature short-wavelength infrared Si photodetector.

Authors:  Yonder Berencén; Slawomir Prucnal; Fang Liu; Ilona Skorupa; René Hübner; Lars Rebohle; Shengqiang Zhou; Harald Schneider; Manfred Helm; Wolfgang Skorupa
Journal:  Sci Rep       Date:  2017-03-06       Impact factor: 4.379

2.  Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

Authors:  P Xing; G F R Chen; X Zhao; D K T Ng; M C Tan; D T H Tan
Journal:  Sci Rep       Date:  2017-08-22       Impact factor: 4.379

  2 in total

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