| Literature DB >> 19547334 |
Laurent Vivien, Mathieu Rouvière, Jean-Marc Fédéli, Delphine Marris-Morini, Jean François Damlencourt, Juliette Mangeney, Paul Crozat, Loubna El Melhaoui, Eric Cassan, Xavier Le Roux, Daniel Pascal, Suzanne Laval.
Abstract
We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.Entities:
Year: 2007 PMID： 19547334 DOI： 10.1364/oe.15.009843
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894