| Literature DB >> 19547080 |
G Vecchi, F Raineri, I Sagnes, A Yacomotti, P Monnier, T J Karle, K-H Lee, R Braive, L Le Gratiet, S Guilet, G Beaudoin, A Taneau, S Bouchoule, A Levenson, R Raj.
Abstract
We report on the continuous-wave operation of a band edge laser at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity.Entities:
Year: 2007 PMID： 19547080 DOI： 10.1364/oe.15.007551
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894