| Literature DB >> 19546984 |
J Van Campenhout, P Rojo Romeo, P Regreny, C Seassal, D Van Thourhout, S Verstuyft, L Di Cioccio, J-M Fedeli, C Lagahe, R Baets.
Abstract
A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuous-wave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI). The InP-based microdisk has a diameter of 7.5 mum and a thickness of 1 mum. A tunnel junction was incorporated to efficiently contact the p-side of the pn-junction. The laser emits at 1.6 mum, with a threshold current as low as 0.5 mA under continuous-wave operation at room temperature, and a threshold voltage of 1.65 V. The SOI-coupled laser slope efficiency was estimated to be 30 muW/mA, with a maximum unidirectional output power of 10 muW.Entities:
Year: 2007 PMID: 19546984 DOI: 10.1364/oe.15.006744
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894