Literature DB >> 19529191

GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate.

Takeo Maruyama, Tadashi Okumura, Shinichi Sakamoto, Koji Miura, Yoshifumi Nishimoto, Shigehisa Arai.   

Abstract

A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.

Entities:  

Year:  2006        PMID: 19529191     DOI: 10.1364/oe.14.008184

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

1.  High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

Authors:  Charles Renard; Timothée Molière; Nikolay Cherkashin; José Alvarez; Laetitia Vincent; Alexandre Jaffré; Géraldine Hallais; James Patrick Connolly; Denis Mencaraglia; Daniel Bouchier
Journal:  Sci Rep       Date:  2016-05-04       Impact factor: 4.379

  1 in total

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