Literature DB >> 19519039

Unravelling the mechanism of pressure induced amorphization of phase change materials.

S Caravati1, M Bernasconi, T D Kühne, M Krack, M Parrinello.   

Abstract

Based on ab initio molecular dynamics simulations, we identify the atomistic mechanism of the pressure induced amorphization of Ge(2)Sb(2)Te(5). The simulations reveal that homopolar Ge/Sb bonds appear in cubic Ge(2)Sb(2)Te(5) under pressure, giving rise to square rings rotated by 45 degrees with respect to the crystalline axis whose formation is induced by the displacement of Te atoms filling the voids of neighboring Ge/Sb stoichiometric vacancies. The concentration of these topological defects increases with pressure up to 21 GPa at which the system is destabilized and transforms into an amorphous phase in agreement with experiments.

Year:  2009        PMID: 19519039     DOI: 10.1103/PhysRevLett.102.205502

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  7 in total

1.  Peierls distortion mediated reversible phase transition in GeTe under pressure.

Authors:  Zhimei Sun; Jian Zhou; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-02       Impact factor: 11.205

2.  Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.

Authors:  M Xu; Y Q Cheng; L Wang; H W Sheng; Y Meng; W G Yang; X D Han; E Ma
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-16       Impact factor: 11.205

3.  Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

Authors:  Zhimei Sun; Jian Zhou; Yuanchun Pan; Zhitang Song; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2011-06-13       Impact factor: 11.205

4.  Distortion-triggered loss of long-range order in solids with bonding energy hierarchy.

Authors:  A V Kolobov; M Krbal; P Fons; J Tominaga; T Uruga
Journal:  Nat Chem       Date:  2011-03-20       Impact factor: 24.427

5.  Disorder Control in Crystalline GeSb2Te4 Using High Pressure.

Authors:  Ming Xu; Wei Zhang; Riccardo Mazzarello; Matthias Wuttig
Journal:  Adv Sci (Weinh)       Date:  2015-06-30       Impact factor: 16.806

6.  Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles.

Authors:  Bin Chen; Gert H Ten Brink; George Palasantzas; Bart J Kooi
Journal:  Sci Rep       Date:  2016-12-20       Impact factor: 4.379

Review 7.  A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

Authors:  Jiang-Jing Wang; Ya-Zhi Xu; Riccardo Mazzarello; Matthias Wuttig; Wei Zhang
Journal:  Materials (Basel)       Date:  2017-07-27       Impact factor: 3.623

  7 in total

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