| Literature DB >> 19516852 |
Haisheng Rong, Ying-Hao Kuo, Shengbo Xu, Ansheng Liu, Richard Jones, Mario Paniccia, Oded Cohen, Omri Raday.
Abstract
We present a monolithic integrated Raman silicon laser based on silicon-on-insulator (SOI) rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we achieved stable, single mode, continuous-wave (CW) lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a measured side mode suppression exceeding 70dB and laser linewidth of <100 kHz. This laser architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device.Entities:
Year: 2006 PMID: 19516852 DOI: 10.1364/oe.14.006705
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894