Soft graphoepitaxy of block copolymer assembly with disposable photoresist confinement.

We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.