Literature DB >> 19503168

All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers.

Colin Baker, I Gregory, M Evans, W Tribe, E Linfield, M Missous.   

Abstract

We demonstrate, for the first time, an all-optoelectronic continuous-wave terahertz photomixing system that uses low-temperature grown InGaAs devices both for emitters and coherent homodyne detectors. The system is compatible with fiber-optic excitation wavelengths, and we compare the performance to the more common LT-GaAs photomixers.

Year:  2005        PMID: 19503168     DOI: 10.1364/opex.13.009639

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

1.  InGaAs Diodes for Terahertz Sensing-Effect of Molecular Beam Epitaxy Growth Conditions.

Authors:  Vilius Palenskis; Linas Minkevičius; Jonas Matukas; Domas Jokubauskis; Sandra Pralgauskaitė; Dalius Seliuta; Bronislovas Čechavičius; Renata Butkutė; Gintaras Valušis
Journal:  Sensors (Basel)       Date:  2018-11-03       Impact factor: 3.576

  1 in total

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