Literature DB >> 19495389

Design of photonic band gap nanocavities for stimulated Raman amplification and lasing in monolithic silicon.

Xiaodong Yang, Chee Wei Wong.   

Abstract

The concept and design of L5 photonic band gap nanocavities in two-dimensional photonic crystal slabs for enhancement of stimulated Raman amplification and lasing in monolithic silicon is suggested for the first time. Specific high quality factor and small modal volume nanocavities are designed which supports the required pump-Stokes modal spacing in silicon, with ultralow lasing thresholds.

Entities:  

Year:  2005        PMID: 19495389     DOI: 10.1364/opex.13.004723

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  3 in total

1.  A micrometre-scale Raman silicon laser with a microwatt threshold.

Authors:  Yasushi Takahashi; Yoshitaka Inui; Masahiro Chihara; Takashi Asano; Ryo Terawaki; Susumu Noda
Journal:  Nature       Date:  2013-06-27       Impact factor: 49.962

2.  CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform.

Authors:  Yuta Ooka; Tomohiro Tetsumoto; Akihiro Fushimi; Wataru Yoshiki; Takasumi Tanabe
Journal:  Sci Rep       Date:  2015-06-18       Impact factor: 4.379

Review 3.  Integrated Raman Laser: A Review of the Last Two Decades.

Authors:  Maria Antonietta Ferrara; Luigi Sirleto
Journal:  Micromachines (Basel)       Date:  2020-03-23       Impact factor: 2.891

  3 in total

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