| Literature DB >> 19495050 |
Richard Jones, Ansheng Liu, Haisheng Rong, Mario Paniccia, Oded Cohen, Dani Hak.
Abstract
In this paper we describe a new modulation scheme using stimulated Raman scattering in conjunction with a reverse biased p-i-n diode embedded in a silicon waveguide. We show optical modulation of a weak probe beam by modulating the reverse bias voltage of the silicon waveguide excited by a strong pump beam. The probe beam modulation is due to the two-photon absorption-induced carrier density modulation in the waveguide. By tuning the probe wavelength to the Stokes wavelength, we demonstrate for the first time a lossless optical modulator in silicon with modulation speeds up to 80-MHz.Year: 2005 PMID: 19495050 DOI: 10.1364/opex.13.001716
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894