Literature DB >> 19495036

Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding.

Toshihide Ide, Toshihiko Baba, Jun Tatebayashi, Satoshi Iwamoto, Toshihiro Nakaoka, Yasuhiko Arakawa.   

Abstract

We demonstrated the first room temperature continuous wave lasing in InAs quantum-dot microdisk lasers with a standard air-cladding optical confinement structure. The spectrum shows the single strong lasing peak at a wavelength of 1280 nm. The threshold pump power is 410 muW, and the corresponding effective threshold obtained by considering the absorption efficiency is 81 muW. This achievement is mainly attributed to the increase in Q factor by the improved disk shape.

Entities:  

Year:  2005        PMID: 19495036     DOI: 10.1364/opex.13.001615

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Authors:  Alexander Woolf; Tim Puchtler; Igor Aharonovich; Tongtong Zhu; Nan Niu; Danqing Wang; Rachel Oliver; Evelyn L Hu
Journal:  Proc Natl Acad Sci U S A       Date:  2014-09-02       Impact factor: 11.205

2.  Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon.

Authors:  Stephan Wirths; Benedikt F Mayer; Heinz Schmid; Marilyne Sousa; Johannes Gooth; Heike Riel; Kirsten E Moselund
Journal:  ACS Nano       Date:  2018-01-30       Impact factor: 15.881

  2 in total

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