| Literature DB >> 19488149 |
Li Fan1, Ya-Xian Fan, Yu-Qiang Li, Huaijin Zhang, Qin Wang, Jin Wang, Hui-Tian Wang.
Abstract
We report a high-efficiency cw Raman conversion with a BaWO(4) Raman crystal in a diode-end-pumped Nd:YVO(4) laser. The Raman threshold is as low as 3.6 W of diode power at 808 nm. The highest output power obtained at the 1,180 nm first-order Stokes line is 3.36 W under the diode power of 25.5 W, corresponding to a slope efficiency of 15.3% and a diode-to-Stokes optical conversion efficiency of 13.2%. The intracavity Raman conversion efficiency is 21.5% with respect to the available output of the 1,064 nm fundamental.Mesh:
Substances:
Year: 2009 PMID: 19488149 DOI: 10.1364/ol.34.001687
Source DB: PubMed Journal: Opt Lett ISSN: 0146-9592 Impact factor: 3.776