| Literature DB >> 19475120 |
Ricardo Claps, V Raghunathan, D Dimitropoulos, B Jalali.
Abstract
We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening.Entities:
Year: 2004 PMID: 19475120 DOI: 10.1364/opex.12.002774
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894