Dopant diffusion during optical fibre drawing.

Diffusion of Ge and F was studied during drawing of silica optical fibres. Preforms were drawn using various draw conditions and fibres analysed using the etching and Atomic Force Microscope (AFM) technique. The results were confirmed by comparison with fibre Refractive Index Profiles (RIP). Both Ge and F were found to diffuse at high temperature, 2100 degrees C, and low draw speed, 10m/min. Diffusion simulations showed that most diffusion occurred in the neck-down region. The draw temperature and preform feed rate had a comparable effect on diffusion, whereas preform diameter did not significantly affect the diffusion.