| Literature DB >> 19468162 |
Hugo E Romero1, Prasoon Joshi, Awnish K Gupta, Humberto R Gutierrez, Milton W Cole, Srinivas A Tadigadapa, Peter C Eklund.
Abstract
We report on experimental studies of NH3 adsorption/desorption on graphene surfaces. The study employs bottom-gated graphene field effect transistors supported on Si/SiO2 substrates. Detection of NH3 occurs through the shift of the source-drain resistance maximum ('Dirac peak') with the gate voltage. The observed shift of the Dirac peak toward negative gate voltages in response to NH3 exposure is consistent with a small charge transfer (f approximately 0.068 +/- 0.004 electrons per molecule at pristine sites) from NH3 to graphene. The desorption kinetics involves a very rapid loss of NH3 from the top surface and a much slower removal from the bottom surface at the interface with the SiO2 that we identify with a Fickian diffusion process.Entities:
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Year: 2009 PMID: 19468162 DOI: 10.1088/0957-4484/20/24/245501
Source DB: PubMed Journal: Nanotechnology ISSN: 0957-4484 Impact factor: 3.874