Literature DB >> 19466129

Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals.

Chun-Feng Lai1, Jim-Yong Chi, Hao-Chung Kuo, Hsi-Hsuan Yen, Chia-En Lee, Chia-Hsin Chao, Han-Tsung Hsueh, Wen-Yung Yeh.   

Abstract

Far-field distributions of GaN-based photonic crystal (PhC) film-transferred light-emitting diodes (FT-LEDs) were investigated. The thickness of the device is about 840 nm. The emission wavelength is around 520 nm. The PhC region is a square lattice with a/lambda around 0.5. Angular-resolved measurements in the Gamma-X and Gamma-M directions were made in the polarized-resolved manner. Guided mode extraction behavior in agreement with the two-dimensional free-photon band calculation was observed. In addition, the pseudo-TM behavior for the non-collinearly coupled modes was observed. The azimuthal-mapping of the angular-resolved spectra revealed the evolution of the collinearly and the non-collinearly coupled modes. Furthermore, the light enhancement of approximately 2.7x and the collimation angle about 102.3 degrees were achieved.

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Year:  2009        PMID: 19466129     DOI: 10.1364/oe.17.008795

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

1.  Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography.

Authors:  Shengxiang Jiang; Yulong Feng; Zhizhong Chen; Lisheng Zhang; Xianzhe Jiang; Qianqian Jiao; Junze Li; Yifan Chen; Dongsan Li; Lijian Liu; Tongjun Yu; Bo Shen; Guoyi Zhang
Journal:  Sci Rep       Date:  2016-02-23       Impact factor: 4.379

  1 in total

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