Photoinduced refractive index change in As2Se3 by 633nm illumination.

Photodarkening of amorphous As2Se3 thin films was generated by a 633-nm HeNe laser. The refractive index and absorption coefficient of the chalcogenide glass was determined, both before and after exposure, by analyzing the material's transmission spectrum. In order to accurately determine the optical constants, the thin film's non-uniform thickness was accounted for. The increase in the refractive index and the coefficient of absorption was investigated and was found to demonstrate saturation with increased exposure time. Index changes as high as 0.05, or 2%, were obtained in As2Se3, a promising glass for all-optical switching.