Low-temperature atomic layer deposition of copper metal thin films: self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc.

A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 degrees C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH(2)NMe(2))(2)] with Et(2)Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 microm) were fabricated.