Literature DB >> 19436094

Charge-based scanning probe readback of nanometer-scale ferroelectric domain patterns at megahertz rates.

Martin G Forrester1, Joachim W Ahner, Mark D Bedillion, Cedric Bedoya, Dierk G Bolten, Kai-Chieh Chang, Gudrun de Gersem, Shan Hu, Earl C Johns, Maissarath Nassirou, Jason Palmer, Andreas Roelofs, Markus Siegert, Shingo Tamaru, Venugopalan Vaithyanathan, Florin Zavaliche, Tong Zhao, Yongjun Zhao.   

Abstract

We present a method for data storage in continuous ferroelectric (FE) media, applicable to storage systems based on one or more scanning probes. Written FE domains are read back in a destructive fashion by applying a constant voltage of magnitude greater than the coercive voltage, as is done in FE random access memory (FeRAM). The resulting flow of screening charges through the readback amplifier provides sufficient signal to allow readback of domains of minimum dimension of the order of 10 nm at MHz rates, orders of magnitude faster than previously demonstrated techniques for readback of domains in continuous FE media.

Year:  2009        PMID: 19436094     DOI: 10.1088/0957-4484/20/22/225501

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  2 in total

1.  Actual information storage with a recording density of 4 Tbit∕in. in a ferroelectric recording medium.

Authors:  Kenkou Tanaka; Yasuo Cho
Journal:  Appl Phys Lett       Date:  2010-08-30       Impact factor: 3.791

2.  Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

Authors:  Jun Jiang; Zi Long Bai; Zhi Hui Chen; Long He; David Wei Zhang; Qing Hua Zhang; Jin An Shi; Min Hyuk Park; James F Scott; Cheol Seong Hwang; An Quan Jiang
Journal:  Nat Mater       Date:  2017-11-20       Impact factor: 43.841

  2 in total

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