Literature DB >> 19436087

The bismuth triiodide-assisted horizontal growth of CdS nanowires and CdO-CdS necklace-like nanowires.

Haiyan Li1, Yanxue Chen, Jun Jiao.   

Abstract

Bismuth triiodide, a compound with a layered structure, is utilized to confine the growth of nanowires along the substrate surface in a low-temperature solution-phase reaction. The confinement is attributed to the electrostatic force between the bismuth triiodide sheet and the deposited Cd2+ cations that caused the CdS nanowires to grow within the surface of the bismuth triiodide sheet. As the nanowires grew longer, they began to form a high-yield woven network. Additionally, use of the same reaction system but with a minimized amount of sulfur led to the growth of CdO-CdS necklace-like nanowires. The optical and electric measurements suggest that the photoluminescence and electron field emission properties of these nanostructures are highly affected by their morphologies and chemical compositions.

Entities:  

Year:  2009        PMID: 19436087     DOI: 10.1088/0957-4484/20/22/225601

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

Review 1.  Electronic materials with a wide band gap: recent developments.

Authors:  Detlef Klimm
Journal:  IUCrJ       Date:  2014-08-29       Impact factor: 4.769

  1 in total

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