Literature DB >> 19421548

On the use and influence of electron-blocking interlayers in polymer light-emitting diodes.

Rui Jin1, Peter A Levermore, Jingsong Huang, Xuhua Wang, Donal D C Bradley, John C deMello.   

Abstract

We report current-voltage-luminance and electromodulation measurements on a series of polymer light-emitting diodes, using indium tin oxide (ITO) coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the anode, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)-diphenylamine) (TFB) as an optional anodic interlayer material, poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) as the emissive layer, and either aluminium or (aluminium-capped) calcium as the cathode. Four device structures were investigated: ITO/PEDOT:PSS/F8T2/Al, ITO/PEDOT:PSS/F8T2/Ca, ITO/PEDOT:PSS/TFB/F8T2/Al, and ITO/PEDOT:PSS/TFB/F8T2/Ca. The devices with interlayers had substantially higher luminance and power efficiencies than their interlayer-free counterparts--a fact we attribute to the energy and mobility barriers that exist at the TFB-F8T2 interface. These barriers play two crucial roles in enhancing device efficiency: firstly, they cause the most easily injected charge carrier to accumulate at the TFB-F8T2 interface until efficient injection of the opposite carrier type becomes favourable; and, secondly, they inhibit electron and hole 'seepage' across the interface, thereby reducing leakage currents. The beneficial influence of these two effects is most marked for the interlayer-containing Al device which, in spite of a sizeable 0.9 eV barrier to electron injection at the cathode, exhibited surprisingly high luminous and power efficiencies of 2.4 cd A(-1) and 1.1 lm W(-1) at an arbitrary reference luminance of 2500 cd m(-2). This compares with peak values of just 0.11 cd A(-1) and 0.07 lm W(-1) at 25 cd m(-2) for the equivalent interlayer-free device (falling to 0.058 cd A(-1) and 0.025 lm W(-1) at 100 cd m(-2)). The interlayer-containing Ca device had luminous and power efficiencies of 3.5 cd A(-1) and 2.9 lm W(-1) at 2500 cd m(-2) compared to 1.1 cd A(-1) and 0.7 lm W(-1) for the equivalent interlayer-free device at 2500 cd m(-2).

Entities:  

Year:  2009        PMID: 19421548     DOI: 10.1039/b819200f

Source DB:  PubMed          Journal:  Phys Chem Chem Phys        ISSN: 1463-9076            Impact factor:   3.676


  2 in total

1.  High-efficiency, solution-processed, multilayer phosphorescent organic light-emitting diodes with a copper thiocyanate hole-injection/hole-transport layer.

Authors:  Ajay Perumal; Hendrik Faber; Nir Yaacobi-Gross; Pichaya Pattanasattayavong; Claire Burgess; Shrawan Jha; Martyn A McLachlan; Paul N Stavrinou; Thomas D Anthopoulos; Donal D C Bradley
Journal:  Adv Mater       Date:  2014-11-10       Impact factor: 30.849

2.  Bottom Contact Metal Oxide Interface Modification Improving the Efficiency of Organic Light Emitting Diodes.

Authors:  Sergey M Pozov; Apostolos Ioakeimidis; Ioannis T Papadas; Chen Sun; Alexandra Z Chrusou; Donal D C Bradley; Stelios A Choulis
Journal:  Materials (Basel)       Date:  2020-11-11       Impact factor: 3.623

  2 in total

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