| Literature DB >> 19417443 |
L Liao1, Z Zhang, B Yan, Z Zheng, Q L Bao, T Wu, C M Li, Z X Shen, J X Zhang, H Gong, J C Li, T Yu.
Abstract
We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (10(4) devices in a 25 mm(2) area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 degrees C, which makes it a promising candidate for a poisonous gas sensing nanodevice.Entities:
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Year: 2009 PMID： 19417443 DOI： 10.1088/0957-4484/20/8/085203
Source DB: PubMed Journal: Nanotechnology ISSN： 0957-4484 Impact factor: 3.874