Literature DB >> 19367885

Distribution of multiexciton generation rates in CdSe and InAs nanocrystals.

Eran Rabani1, Roi Baer.   

Abstract

The distribution of rates of multiexciton generation following photon absorption is calculated for semiconductor nanocrystals (NCs). The rates of biexciton generation are calculated using Fermi's golden rule with all relevant Coulomb matrix elements, taking into account proper selection rules within a screened semiempirical pseudopotential approach. In CdSe and InAs NCs, we find a broad distribution of biexciton generation rates depending strongly on the exciton energy and size of the NC. Multiexciton generation becomes inefficientfor NCs exceeding 3 nm in diameter in the photon energy range of 2-3 times the band gap.

Entities:  

Year:  2008        PMID: 19367885     DOI: 10.1021/nl802443c

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  4 in total

1.  Carrier multiplication in silicon nanocrystals: ab initio results.

Authors:  Ivan Marri; Marco Govoni; Stefano Ossicini
Journal:  Beilstein J Nanotechnol       Date:  2015-02-02       Impact factor: 3.649

2.  Theory of highly efficient multiexciton generation in type-II nanorods.

Authors:  Hagai Eshet; Roi Baer; Daniel Neuhauser; Eran Rabani
Journal:  Nat Commun       Date:  2016-10-11       Impact factor: 14.919

Review 3.  Carrier Multiplication Mechanisms and Competing Processes in Colloidal Semiconductor Nanostructures.

Authors:  Stephen V Kershaw; Andrey L Rogach
Journal:  Materials (Basel)       Date:  2017-09-18       Impact factor: 3.623

Review 4.  Multiple Exciton Generation in Colloidal Nanocrystals.

Authors:  Charles Smith; David Binks
Journal:  Nanomaterials (Basel)       Date:  2013-12-24       Impact factor: 5.076

  4 in total

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