Literature DB >> 19349666

Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure.

M Schowalter1, A Rosenauer, J T Titantah, D Lamoen.   

Abstract

We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given.

Entities:  

Year:  2009        PMID: 19349666     DOI: 10.1107/S0108767309004966

Source DB:  PubMed          Journal:  Acta Crystallogr A        ISSN: 0108-7673            Impact factor:   2.290


  1 in total

1.  Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction.

Authors:  Knut Müller; Florian F Krause; Armand Béché; Marco Schowalter; Vincent Galioit; Stefan Löffler; Johan Verbeeck; Josef Zweck; Peter Schattschneider; Andreas Rosenauer
Journal:  Nat Commun       Date:  2014-12-15       Impact factor: 14.919

  1 in total

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