Literature DB >> 19323476

Two-terminal nanoelectromechanical devices based on germanium nanowires.

Jana Andzane1, Nikolay Petkov, Aleksandrs I Livshits, John J Boland, Justin D Holmes, Donats Erts.   

Abstract

A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.

Entities:  

Year:  2009        PMID: 19323476     DOI: 10.1021/nl8037807

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Application of nanomaterials in two-terminal resistive-switching memory devices.

Authors:  Jianyong Ouyang
Journal:  Nano Rev       Date:  2010-05-26

Review 2.  Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches - materials solutions and operational conditions.

Authors:  Liga Jasulaneca; Jelena Kosmaca; Raimonds Meija; Jana Andzane; Donats Erts
Journal:  Beilstein J Nanotechnol       Date:  2018-01-25       Impact factor: 3.649

3.  Vertical, capacitive microelectromechanical switches produced via direct writing of copper wires.

Authors:  Zhiran Yi; Jianjun Guo; Yining Chen; Haiqing Zhang; Shuai Zhang; Gaojie Xu; Minfeng Yu; Ping Cui
Journal:  Microsyst Nanoeng       Date:  2016-04-25       Impact factor: 7.127

  3 in total

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