| Literature DB >> 19281253 |
V Sivakov1, G Andrä, A Gawlik, A Berger, J Plentz, F Falk, S H Christiansen.
Abstract
Silicon nanowire (SiNW)-based solar cells on glass substrates have been fabricated by wet electroless chemical etching (using silver nitrate and hydrofluoric acid) of 2.7 microm multicrystalline p(+)nn(+) doped silicon layers thereby creating the nanowire structure. Low reflectance (<10%, at 300-800 nm) and a strong broadband optical absorption (>90% at 500 nm) have been measured. The highest open-circuit voltage (V(oc)) and short-circuit current density (J(sc)) for AM1.5 illumination were 450 mV and 40 mA/cm(2), respectively at a maximum power conversion efficiency of 4.4%.Entities:
Year: 2009 PMID: 19281253 DOI: 10.1021/nl803641f
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189