Literature DB >> 19269097

A model of secondary electron imaging in the helium ion scanning microscope.

Ranjan Ramachandra1, Brendan Griffin, David Joy.   

Abstract

A combination of the 'semi-empirical' model for secondary electron production and the TRIM routines which describe ion stopping power, scattering, and transport, has been used to construct a Monte Carlo simulation (IONiSE) that can quantitatively interpret the generation of secondary electrons (SE) from materials by fast helium ions. This approach requires that the parameters of the semi-empirical model be determined by fitting to experimental yield data but has the merit that, unlike more fundamental models, it can be applied with equal ease to both pure elements and complex compounds. The application of the model to predict the topographic yield variation of helium generated SE as a function of energy and material, and to investigate the ratio between SE generated by incident and backscattered ions, is demonstrated.

Entities:  

Year:  2009        PMID: 19269097     DOI: 10.1016/j.ultramic.2009.01.013

Source DB:  PubMed          Journal:  Ultramicroscopy        ISSN: 0304-3991            Impact factor:   2.689


  13 in total

1.  Bright focused ion beam sources based on laser-cooled atoms.

Authors:  J J McClelland; A V Steele; B Knuffman; K A Twedt; A Schwarzkopf; T M Wilson
Journal:  Appl Phys Rev       Date:  2016-03-24       Impact factor: 19.162

Review 2.  Superconducting Materials and Devices Grown by Focused Ion and Electron Beam Induced Deposition.

Authors:  Pablo Orús; Fabian Sigloch; Soraya Sangiao; José María De Teresa
Journal:  Nanomaterials (Basel)       Date:  2022-04-15       Impact factor: 5.719

3.  Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism.

Authors:  Gregor Hlawacek; Vasilisa Veligura; Stefan Lorbek; Tijs F Mocking; Antony George; Raoul van Gastel; Harold J W Zandvliet; Bene Poelsema
Journal:  Beilstein J Nanotechnol       Date:  2012-07-12       Impact factor: 3.649

4.  Channeling in helium ion microscopy: Mapping of crystal orientation.

Authors:  Vasilisa Veligura; Gregor Hlawacek; Raoul van Gastel; Harold J W Zandvliet; Bene Poelsema
Journal:  Beilstein J Nanotechnol       Date:  2012-07-10       Impact factor: 3.649

5.  Scanning reflection ion microscopy in a helium ion microscope.

Authors:  Yuri V Petrov; Oleg F Vyvenko
Journal:  Beilstein J Nanotechnol       Date:  2015-05-07       Impact factor: 3.649

6.  Fabrication of carbon nanomembranes by helium ion beam lithography.

Authors:  Xianghui Zhang; Henning Vieker; André Beyer; Armin Gölzhäuser
Journal:  Beilstein J Nanotechnol       Date:  2014-02-21       Impact factor: 3.649

7.  Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene.

Authors:  Yangbo Zhou; Daniel S Fox; Pierce Maguire; Robert O'Connell; Robert Masters; Cornelia Rodenburg; Hanchun Wu; Maurizio Dapor; Ying Chen; Hongzhou Zhang
Journal:  Sci Rep       Date:  2016-02-16       Impact factor: 4.379

8.  Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy.

Authors:  Vighter Iberi; Ivan Vlassiouk; X-G Zhang; Brad Matola; Allison Linn; David C Joy; Adam J Rondinone
Journal:  Sci Rep       Date:  2015-07-07       Impact factor: 4.379

9.  Digging gold: keV He(+) ion interaction with Au.

Authors:  Vasilisa Veligura; Gregor Hlawacek; Robin P Berkelaar; Raoul van Gastel; Harold J W Zandvliet; Bene Poelsema
Journal:  Beilstein J Nanotechnol       Date:  2013-07-24       Impact factor: 3.649

10.  Helium Ion Microscopy (HIM) for the imaging of biological samples at sub-nanometer resolution.

Authors:  Matthew S Joens; Chuong Huynh; James M Kasuboski; David Ferranti; Yury J Sigal; Fabian Zeitvogel; Martin Obst; Claus J Burkhardt; Kevin P Curran; Sreekanth H Chalasani; Lewis A Stern; Bernhard Goetze; James A J Fitzpatrick
Journal:  Sci Rep       Date:  2013-12-17       Impact factor: 4.379

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