| Literature DB >> 19257786 |
T Leisegang1, H Stöcker, A A Levin, T Weissbach, M Zschornak, E Gutmann, K Rickers, S Gemming, D C Meyer.
Abstract
A (001) SrTiO3 wafer has been investigated in situ at room temperature under application of a static electric field of varying polarity by fluorescence x-ray absorption near edge structure (XANES) analysis at the Sr-K and Ti-K absorption edges. The XANES spectra show a clear shift of the Ti-K absorption edge energy. The shift is attributed to a change of the Ti valence state in a volume invoked by diffusion of the oxygen ions and vacancies. No shift was observed for the Sr-K absorption edge energy. Theoretical calculations support these findings.Entities:
Year: 2009 PMID： 19257786 DOI： 10.1103/PhysRevLett.102.087601
Source DB: PubMed Journal: Phys Rev Lett ISSN： 0031-9007 Impact factor: 9.161