| Literature DB >> 19257617 |
K Kechedzhi1, D W Horsell, F V Tikhonenko, A K Savchenko, R V Gorbachev, I V Lerner, V I Fal'ko.
Abstract
We propose a method of measuring the electron temperature T_{e} in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime (T_{e} approximately T, the bath temperature). The method can be especially useful in case of overheating, T_{e}>T. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that T_{e} extracted from the correlation function is insensitive to these details.Entities:
Year: 2009 PMID: 19257617 DOI: 10.1103/PhysRevLett.102.066801
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161