Literature DB >> 19257601

Transition metal impurities on the bond-centered site in germanium.

S Decoster1, S Cottenier, B De Vries, H Emmerich, U Wahl, J G Correia, A Vantomme.   

Abstract

We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the substitutional Ge position. Less expected is the observation of a second fraction on the sixfold coordinated bond-centered site. Ab initio calculated heats of formation suggest this is the result of the trapping of a vacancy by a substitutional TM impurity, spontaneously forming an impurity-vacancy complex in the split-vacancy configuration. We also present an approach to displace the TM impurities from the electrically active substitutional site to the bond-centered site.

Entities:  

Year:  2009        PMID: 19257601     DOI: 10.1103/PhysRevLett.102.065502

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Dynamic annealing in Ge studied by pulsed ion beams.

Authors:  J B Wallace; L B Bayu Aji; L Shao; S O Kucheyev
Journal:  Sci Rep       Date:  2017-10-13       Impact factor: 4.379

  1 in total

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