Literature DB >> 19257546

Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors.

Narcizo M Souza-Neto1, Daniel Haskel, Yuan-Chieh Tseng, Gerard Lapertot.   

Abstract

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific x-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4f and 5d electronic orbitals. Anion substitution (Te-->O) enhances competing exchange pathways through spin-polarized anion p states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.

Year:  2009        PMID: 19257546     DOI: 10.1103/PhysRevLett.102.057206

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Direct evidence for significant spin-polarization of EuS in Co/EuS multilayers at room temperature.

Authors:  S D Pappas; P Poulopoulos; B Lewitz; A Straub; A Goschew; V Kapaklis; F Wilhelm; A Rogalev; P Fumagalli
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

2.  Unraveling 5f-6d hybridization in uranium compounds via spin-resolved L-edge spectroscopy.

Authors:  R D Dos Reis; L S I Veiga; C A Escanhoela; J C Lang; Y Joly; F G Gandra; D Haskel; N M Souza-Neto
Journal:  Nat Commun       Date:  2017-10-31       Impact factor: 14.919

3.  Crystal-field mediated electronic transitions of EuS up to 35 GPa.

Authors:  Virginia Monteseguro; Jose A Barreda-Argüeso; Javier Ruiz-Fuertes; Angelika D Rosa; Holger L Meyerheim; Tetsuo Irifune; Fernando Rodriguez
Journal:  Sci Rep       Date:  2022-01-24       Impact factor: 4.379

4.  Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon.

Authors:  Dmitry V Averyanov; Christina G Karateeva; Igor A Karateev; Andrey M Tokmachev; Alexander L Vasiliev; Sergey I Zolotarev; Igor A Likhachev; Vyacheslav G Storchak
Journal:  Sci Rep       Date:  2016-03-09       Impact factor: 4.379

  4 in total

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