Literature DB >> 19257377

Dopant-induced intrinsic bistability in a biased nanowire.

Gennady Mil'nikov1, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki.   

Abstract

Self-consistent calculations of quantum transport through a single donor atom in the semiconductor nanowire show intrinsic bistability of the nonequilibrium electronic state. We attribute this effect to two distinct ion screening mechanisms.

Entities:  

Year:  2009        PMID: 19257377     DOI: 10.1103/PhysRevLett.102.036801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance.

Authors:  Masashi Uematsu; Kohei M Itoh; Gennady Mil'nikov; Hideki Minari; Nobuya Mori
Journal:  Nanoscale Res Lett       Date:  2012-12-21       Impact factor: 4.703

  1 in total

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