Literature DB >> 19253998

Method for suppression of stacking faults in Wurtzite III-V nanowires.

Hadas Shtrikman1, Ronit Popovitz-Biro, Andrey Kretinin, Lothar Houben, Moty Heiblum, Małgorzata Bukała, Marta Galicka, Ryszard Buczko, Perła Kacman.   

Abstract

The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter ( approximately 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.

Entities:  

Year:  2009        PMID： 19253998     DOI： 10.1021/nl803524s

Source DB:  PubMed          Journal:  Nano Lett        ISSN： 1530-6984            Impact factor:   11.189


  9 in total

1.  Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment.

Authors:  X Zhang; V G Dubrovskii; N V Sibirev; G E Cirlin; C Sartel; M Tchernycheva; J C Harmand; F Glas
Journal:  Nanoscale Res Lett       Date:  2010-07-24       Impact factor: 4.703

2.  Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires.

Authors:  J Greil; S Assali; Y Isono; A Belabbes; F Bechstedt; F O Valega Mackenzie; A Yu Silov; E P A M Bakkers; J E M Haverkort
Journal:  Nano Lett       Date:  2016-05-13       Impact factor: 11.189

3.  Self-catalyzed Growth of InAs Nanowires on InP Substrate.

Authors:  Bang Li; Xin Yan; Xia Zhang; Xiaomin Ren
Journal:  Nanoscale Res Lett       Date:  2017-01-13       Impact factor: 4.703

4.  Analytical description of nanowires III: regular cross sections for wurtzite structures.

Authors:  Dirk König; Sean C Smith
Journal:  Acta Crystallogr B Struct Sci Cryst Eng Mater       Date:  2022-07-15

5.  Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots.

Authors:  Sung Jin An; Myung-Ho Bae; Myoung-Jae Lee; Man Suk Song; Morten H Madsen; Jesper Nygård; Christian Schönenberger; Andreas Baumgartner; Jungpil Seo; Minkyung Jung
Journal:  Nanoscale Adv       Date:  2022-08-11

6.  Large-scale and uniform preparation of pure-phase wurtzite GaAs NWs on non-crystalline substrates.

Authors:  Ning Han; Jared J Hou; Fengyun Wang; Senpo Yip; Hao Lin; Ming Fang; Fei Xiu; Xiaoling Shi; Takfu Hung; Johnny C Ho
Journal:  Nanoscale Res Lett       Date:  2012-11-21       Impact factor: 4.703

7.  Direct band gap wurtzite gallium phosphide nanowires.

Authors:  S Assali; I Zardo; S Plissard; D Kriegner; M A Verheijen; G Bauer; A Meijerink; A Belabbes; F Bechstedt; J E M Haverkort; E P A M Bakkers
Journal:  Nano Lett       Date:  2013-03-18       Impact factor: 11.189

8.  Fabrication of self-assembled Au droplets by the systematic variation of the deposition amount on various type-B GaAs surfaces.

Authors:  Mao Sui; Ming-Yu Li; Eun-Soo Kim; Jihoon Lee
Journal:  Nanoscale Res Lett       Date:  2014-08-27       Impact factor: 4.703

9.  Large spatial extension of the zero-energy Yu-Shiba-Rusinov state in a magnetic field.

Authors:  Zoltán Scherübl; Gergő Fülöp; Cătălin Paşcu Moca; Jörg Gramich; Andreas Baumgartner; Péter Makk; Tosson Elalaily; Christian Schönenberger; Jesper Nygård; Gergely Zaránd; Szabolcs Csonka
Journal:  Nat Commun       Date:  2020-04-14       Impact factor: 14.919
  9 in total

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