3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film.

The distribution of Mn in a Ga(0.963)Mn(0.037)As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga(0.963)Mn(0.037)As are uniformly dissolved without forming any nanometer-sized clusters.