| Literature DB >> 19143502 |
Josef A Czaban1, David A Thompson, Ray R LaPierre.
Abstract
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.Entities:
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Year: 2009 PMID: 19143502 DOI: 10.1021/nl802700u
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189