Literature DB >> 19113780

Optical bistability in a GaAs-based polariton diode.

Daniele Bajoni1, Elizaveta Semenova, Aristide Lemaître, Sophie Bouchoule, Esther Wertz, Pascale Senellart, Sylvain Barbay, Robert Kuszelewicz, Jacqueline Bloch.   

Abstract

We report on a new type of optical nonlinearity in a polariton p-i-n microcavity. Abrupt switching between the strong and weak coupling regime is induced by controlling the electric field within the cavity. As a consequence, bistable cycles are observed for low optical powers (2-3 orders of magnitude less than for Kerr induced bistability). Signatures of switching fronts propagating through the whole 300 x 300 microm2 mesa surface are evidenced.

Year:  2008        PMID: 19113780     DOI: 10.1103/PhysRevLett.101.266402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Multistability of a coherent spin ensemble in a semiconductor microcavity.

Authors:  T K Paraïso; M Wouters; Y Léger; F Morier-Genoud; B Deveaud-Plédran
Journal:  Nat Mater       Date:  2010-07-04       Impact factor: 43.841

2.  All-optical polariton transistor.

Authors:  D Ballarini; M De Giorgi; E Cancellieri; R Houdré; E Giacobino; R Cingolani; A Bramati; G Gigli; D Sanvitto
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

3.  Prototype of a bistable polariton field-effect transistor switch.

Authors:  H Suchomel; S Brodbeck; T C H Liew; M Amthor; M Klaas; S Klembt; M Kamp; S Höfling; C Schneider
Journal:  Sci Rep       Date:  2017-07-11       Impact factor: 4.379

4.  Single and double bosonic stimulation of THz emission in polaritonic systems.

Authors:  M A Kaliteevski; K A Ivanov; G Pozina; A J Gallant
Journal:  Sci Rep       Date:  2014-06-25       Impact factor: 4.379

  4 in total

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