Literature DB >> 19113593

1T-TiSe2: semimetal or semiconductor?

Julia C E Rasch1, Torsten Stemmler, Beate Müller, Lenart Dudy, Recardo Manzke.   

Abstract

Even though the semimetallic behavior of 1T-TiSe2 seemed to be well established by band structure calculations and photoemission results, this conclusion has been challenged recently. Two high-resolution photoemission investigations deduced semiconducting behavior, however with a very small band gap. Such conclusion from photoemission is afflicted, in principle, by the problem of determining an unoccupied conduction band by photoemission. This problem is solved here by the idea of H2O adsorption onto the van der Waals-like surface, causing a distinct bending of the bands and resulting in a filled lowest conduction band. The detailed analysis yields undoubtedly semiconducting behavior for 1T-TiSe2 and interesting properties of a semiconductor with extremely small band gap.

Entities:  

Year:  2008        PMID: 19113593     DOI: 10.1103/PhysRevLett.101.237602

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Area Selective Growth of Titanium Diselenide Thin Films into Micropatterned Substrates by Low-Pressure Chemical Vapor Deposition.

Authors:  Sophie L Benjamin; C H Kees de Groot; Chitra Gurnani; Andrew L Hector; Ruomeng Huang; Konstantin Ignatyev; William Levason; Stuart J Pearce; Fiona Thomas; Gillian Reid
Journal:  Chem Mater       Date:  2013-11-05       Impact factor: 9.811

Review 2.  Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology.

Authors:  Jiawen You; Md Delowar Hossain; Zhengtang Luo
Journal:  Nano Converg       Date:  2018-09-28
  2 in total

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