Literature DB >> 19113427

Theory of directed nucleation of strained islands on patterned substrates.

Hao Hu1, H J Gao, Feng Liu.   

Abstract

We develop a theoretical model to elucidate the nucleation of strained islands on patterned substrates. We show that island nucleation is directed to the preferred sites by a much lower energy barrier and smaller critical size. Strain relaxation directs island nucleation to the bottom of a pit rather than the top of a ridge as commonly perceived, while large surface energy anisotropy favors nucleation at both places. The theory explains some puzzling experimental results and provides useful guidelines for future experiments.

Year:  2008        PMID: 19113427     DOI: 10.1103/PhysRevLett.101.216102

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography.

Authors:  F Pezzoli; M Stoffel; T Merdzhanova; A Rastelli; Og Schmidt
Journal:  Nanoscale Res Lett       Date:  2009-06-06       Impact factor: 4.703

2.  Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion.

Authors:  Ruifan Tang; Kai Huang; Hongkai Lai; Cheng Li; Zhiming Wu; Junyong Kang
Journal:  Nanoscale Res Lett       Date:  2012-06-26       Impact factor: 4.703

3.  Strain Effect on Electronic Structure and Work Function in α-Fe₂O₃ Films.

Authors:  Li Chen; Changmin Shi; Xiaolong Li; Zhishan Mi; Dongchao Wang; Hongmei Liu; Lijie Qiao
Journal:  Materials (Basel)       Date:  2017-03-09       Impact factor: 3.623

4.  Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth.

Authors:  Chuan-Fu Lin; Hung-Chih Kan; Subramaniam Kanakaraju; Christopher Richardson; Raymond Phaneuf
Journal:  Nanomaterials (Basel)       Date:  2014-05-12       Impact factor: 5.076

  4 in total

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