| Literature DB >> 19009069 |
Chih-Heng Lin1, Cheng-Yun Hsiao, Cheng-Hsiung Hung, Yen-Ren Lo, Cheng-Che Lee, Chun-Jung Su, Horng-Chin Lin, Fu-Hsiang Ko, Tiao-Yuan Huang, Yuh-Shyong Yang.
Abstract
An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.Entities:
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Year: 2008 PMID: 19009069 DOI: 10.1039/b812968a
Source DB: PubMed Journal: Chem Commun (Camb) ISSN: 1359-7345 Impact factor: 6.222