Literature DB >> 18999847

Spin states of holes in Ge/Si nanowire quantum dots.

S Roddaro1, A Fuhrer, P Brusheim, C Fasth, H Q Xu, L Samuelson, J Xiang, C M Lieber.   

Abstract

We investigate tunable hole quantum dots defined by surface gating Ge/Si core-shell nanowire heterostructures. In single level Coulomb-blockade transport measurements at low temperatures spin doublets are found, which become sequentially filled by holes. Magnetotransport measurements allow us to extract a g factor g approximately 2 close to the value of a free spin-1/2 particle in the case of the smallest dot. In less confined quantum dots smaller g factor values are observed. This indicates a lifting of the expected strong spin-orbit interaction effects in the valence band for holes confined in small enough quantum dots. By comparing the excitation spectrum with the addition spectrum we tentatively identify a hole exchange interaction strength chi approximately 130 microeV.

Entities:  

Year:  2008        PMID: 18999847     DOI: 10.1103/PhysRevLett.101.186802

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Hole spin relaxation in Ge-Si core-shell nanowire qubits.

Authors:  Yongjie Hu; Ferdinand Kuemmeth; Charles M Lieber; Charles M Marcus
Journal:  Nat Nanotechnol       Date:  2011-12-18       Impact factor: 39.213

2.  Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.

Authors:  G Katsaros; P Spathis; M Stoffel; F Fournel; M Mongillo; V Bouchiat; F Lefloch; A Rastelli; O G Schmidt; S De Franceschi
Journal:  Nat Nanotechnol       Date:  2010-05-02       Impact factor: 39.213

3.  Heavy-Hole States in Germanium Hut Wires.

Authors:  Hannes Watzinger; Christoph Kloeffel; Lada Vukušić; Marta D Rossell; Violetta Sessi; Josip Kukučka; Raimund Kirchschlager; Elisabeth Lausecker; Alisha Truhlar; Martin Glaser; Armando Rastelli; Andreas Fuhrer; Daniel Loss; Georgios Katsaros
Journal:  Nano Lett       Date:  2016-10-17       Impact factor: 11.189

4.  Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot.

Authors:  S D Liles; R Li; C H Yang; F E Hudson; M Veldhorst; A S Dzurak; A R Hamilton
Journal:  Nat Commun       Date:  2018-08-14       Impact factor: 14.919

  4 in total

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