Literature DB >> 18999784

Light-induced matrix softening of Ge-As-Se network glasses.

Laurent Calvez1, Zhiyong Yang, Pierre Lucas.   

Abstract

Sub-band-gap irradiation of a series of bulk Ge-As-Se glass samples with a tunable laser source shows that photostructural processes in chalcogenide glasses are strongly dependent on the covalent network connectivity. The photoexcitation process is affected by the bond density as well as the network rigidity. Photostructural changes such as photodarkening and photoexpansion decrease and tend to vanish in overcoordinated glass in accordance with the rigidity percolation threshold. Also, the intensity required to achieve photofluidity is linearly dependent on the bond density. These results provide quantitative support for a description of photofluidity as a summative bond breaking process.

Entities:  

Year:  2008        PMID: 18999784     DOI: 10.1103/PhysRevLett.101.177402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35-x)Se65 thin films.

Authors:  Pritam Khan; H Jain; K V Adarsh
Journal:  Sci Rep       Date:  2014-02-07       Impact factor: 4.379

2.  Test-photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system.

Authors:  P Hawlová; F Verger; V Nazabal; R Boidin; P Němec
Journal:  Sci Rep       Date:  2015-03-23       Impact factor: 4.379

3.  Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge₅As₃₀Se₆₅ thin film.

Authors:  Pritam Khan; Tarun Saxena; H Jain; K V Adarsh
Journal:  Sci Rep       Date:  2014-10-10       Impact factor: 4.379

  3 in total

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