| Literature DB >> 18825214 |
M D Yang1, Y K Liu, J L Shen, C H Wu, C A Lin, W H Chang, H H Wang, H I Yeh, W H Chan, W J Parak.
Abstract
We studied the photoluminescence (PL) and photovoltaic current-voltage characteristics of the three-junction InGaP/InGaAs/Ge solar cells by depositing Au nanoclusters on the cell surface. The increases of the PL intensity and short-circuit current after incorporation of Au nanoclusters are evident. An increase of 15.3% in energy conversion efficiency (from 19.6 to 22.6%) is obtained for the three-junction solar cells in which Au nanoclusters have been incorporated. We suggest that the increased light trapping due to radiative scattering from Au nanoclusters is responsible for improving the performance of the three-junction solar cells.Entities:
Mesh:
Substances:
Year: 2008 PMID: 18825214 DOI: 10.1364/oe.16.015754
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894