| Literature DB >> 18764656 |
G W Semenoff1, V Semenoff, Fei Zhou.
Abstract
The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support midgap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the midgap band is partially filled, the domain wall can behave like a one-dimensional metal embedded in a semiconductor and could potentially be used as a single-channel quantum wire.Entities:
Year: 2008 PMID: 18764656 DOI: 10.1103/PhysRevLett.101.087204
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161